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US 2016/0240761 A1Published application
Thermoelectric device
AssigneeTDK Corporation
InventorsKazuya MAEKAWA, Takashi ASATANI
Life of this patent
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Abstract
A thermoelectric device includes a semiconductor stacked thin film including a SiGe layer and a Si layer in contact with the SiGe layer. The SiGe has a Si:Ge composition ratio by atomic number ratio within a range of 85:15 to 63:37. The stacked thin film has a plurality of stacked structures each having the SiGe layer and the Si layer.
Claims6
A thermoelectric device comprising:
- a semiconductor stacked thin film including a SiGe layer and a Si layer in contact with the SiGe layer, wherein the SiGe has a Si:Ge composition ratio by atomic number ratio within a range of 85:15 to 63:37;
- and the stacked thin film has a plurality of stacked structures each having the SiGe layer and the Si layer.
Dependencies are inferred from the claim text.