Light emitting diode having distributed bragg reflectors (dbr) and manufacturing method thereof

A manufacturing method of LED having distributed Bragg reflector, comprising steps of:

• growing an epitaxial layer having a first semiconductor layer, a light emitting layer and a second semiconductor layer;
• growing a transparent conductive layer on the second semiconductor layer;
• growing a Bragg reflective layer on the transparent conductive layer;
• forming a plurality of first through holes penetrating through the Bragg reflective layer;
• and
• growing a metal layer on the Bragg reflective layer, wherein the metal layer is electrically connected to the transparent conductive layer via the first through holes.

An LED having distributed Bragg reflector, comprising:

• an epitaxial layer having a first semiconductor layer, a light emitting layer and a second semiconductor layer;
• a plurality of current blocking layers disposed on the second semiconductor layer;
• a transparent conductive layer disposed on the current blocking layers and the second semiconductor layer;
• a Bragg reflective layer disposed on the transparent conductive layer and having a plurality of first through holes penetrating the Bragg reflective layer and corresponding to the current blocking layers to expose a part of the transparent conductive layer;
• a first electrode electrically connected to the first semiconductor layer;
• and
• a second electrode disposed on the Bragg reflective layer and electrically connected to the transparent conductive layer via the first through holes.