Optoelectronic Semiconductor Device

An optoelectronic semiconductor device formed from a layer stack based on a nitride compound semiconductor, the layer stack comprising:

• an n-type semiconductor region;
• an active layer overlying the n-type semiconductor region;
• and
• a layer sequence comprising a plurality of p-doped layers of AlxInyGa1-x-yN overlying the active layer, where 0≦x≦1, 0≦y≦1 and x+y≦1, the layer sequence including a first p-doped layer with an aluminum content x1≧0.5 and a thickness of no more than 3 nm overlying the active layer, a second p-doped layer with an aluminum content x2<x1 overlying the first p-doped layer, and a third p-doped layer with an aluminum content x3<x2.

An optoelectronic semiconductor device, comprising a layer stack based on a nitride compound semiconductor which comprises an n-type semiconductor region, a p-type semiconductor region and an active layer arranged between the n-type semiconductor region and the p-type semiconductor region;

• wherein to form an electron barrier, the p-type semiconductor region comprises a layer sequence with a plurality of p-doped layers of AlxInyGa1-x-yN with 0≦x≦1, 0≦y≦1 and x+y≦1;
• wherein the layer sequence has a first p-doped layer with an aluminum content x1≧0.5 and a thickness of no more than 3 nm;
• wherein the first p-doped layer is followed on a side remote from the active layer by at least one second p-doped layer with an aluminum content x2<x1 and one third p-doped layer with an aluminum content x3<x2;
• wherein a fourth p-doped layer is arranged between the first p-doped layer and the second p-doped layer, the fourth p-doped layer having a thickness of less than 4 nm;
• and
• wherein the fourth p-doped layer has an aluminum content x4 having a gradient, wherein the aluminum content x4 in the fourth p-doped layer has a minimum, at which x4<x1 and x4<x2.