Semiconductor light emitting device
OwnerTae Young PARK, Sang Bum LEE +5inventors
InventorsTae Young PARK, Sang Bum LEE, Pun Jae CHOI, Sung Joon KIM, Jin Wook CHUNG, Se Jun HAN, Su Min HWANGBO
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Abstract
A semiconductor light emitting device is provided. The semiconductor light emitting device includes: a support substrate; a first layer disposed on the support substrate and applying tensile stress to the support substrate; a bonding layer disposed on the first layer; a second layer disposed on the bonding layer and applying compressive stress to the support substrate; and a light emitting structure disposed on the second layer and including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer.
Claims20
A semiconductor light emitting device, comprising:
- a support substrate;
- a first layer disposed on the support substrate and applying tensile stress to the support substrate;
- a bonding layer disposed on the first layer and comprising a first bonding metal and a second bonding metal;
- a second layer disposed on the bonding layer and applying compressive stress to the support substrate;
- and
- a light emitting structure disposed on the second layer and comprising a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer.
A semiconductor light emitting device, comprising:
- a support substrate;
- a first layer disposed on the support substrate;
- a bonding layer disposed on the first layer and comprising a compound of at least two materials;
- a second layer disposed on the bonding layer;
- and
- a light emitting structure disposed on the second layer,
- wherein a thermal expansion coefficient of the first layer is greater than a thermal expansion coefficient of the support substrate.
A semiconductor light emitting device, comprising:
- a support substrate;
- a first material layer disposed on the support substrate and having a thermal expansion coefficient greater than a thermal expansion coefficient of the support substrate;
- a bonding layer disposed on the first material layer;
- a second material layer disposed on the bonding layer and having a thermal expansion coefficient smaller than the thermal expansion coefficient of the first material layer;
- and
- a light emitting structure disposed on the second material layer and including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer.
Dependencies are inferred from the claim text.