Solar cell with a hetero-junction structure and method for manufacturing the same
AssigneeNeo Solar Power Corp.
InventorPeng CHEN
Life of this patent
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Abstract
A solar cell with a hetero junction structure includes a substrate, a first buffer layer, a second buffer layer, a second n-type amorphous semiconductor layer, a second p-type amorphous semiconductor layer, a first transparent conductive oxide (TCO) layer and a second TCO layer. A method for manufacturing the aforesaid solar cell includes the steps of forming the first n-type and the first p-type amorphous semiconductor layers respectively on a first surface and a second surface of the substrate, dope-treating the first n-type and the first p-type amorphous semiconductor layers by a gas plasma, and forming a first and a second intrinsic amorphous semiconductor layers respectively on the first n-type and the first p-type amorphous semiconductor layers.
Claims14
A solar cell with a hetero junction structure, comprising:
- a semiconductor substrate, having a first surface and a second surface opposing to the first surface, doped by a first type semiconductor;
- a first buffer layer, formed on the first surface, further including:
- a first n-type amorphous semiconductor layer, formed on the first surface, doped by an n-type semiconductor with a dope concentration ranged from 1×1014 to 1×1016 atoms/cm3;
- and
- a first intrinsic amorphous semiconductor layer, formed on the first n-type amorphous semiconductor layer;
- a second buffer layer, formed on the second surface, further including:
- a first p-type amorphous semiconductor layer, formed on the second surface, doped by a p-type semiconductor with a dope concentration ranged from 1×1014 to 1×1016 atoms/cm3;
- and
- a second intrinsic amorphous semiconductor layer, formed on the first p-type amorphous semiconductor layer;
- a second n-type amorphous semiconductor layer, formed on the first buffer layer;
- a second p-type amorphous semiconductor layer, formed on the second buffer layer;
- a first transparent conductive oxide (TCO) layer, formed on the second n-type amorphous semiconductor layer;
- and
- a second transparent conductive oxide (TCO) layer, formed on the second p-type amorphous semiconductor layer.
A method for manufacturing a solar cell with a hetero-junction structure, comprising the steps of:
- (a) providing a semiconductor substrate doped by a first type semiconductor;
- (b) forming a first n-type amorphous semiconductor layer of a first buffer layer on a first surface of the semiconductor substrate, wherein the first n-type amorphous semiconductor layer is doped by an n-type semiconductor with a dope concentration ranged from 1×1014 to 1×1016 atoms/cm3;
- (c) forming a first intrinsic amorphous semiconductor layer of the first buffer layer on the first n-type amorphous semiconductor layer;
- (d) forming a first p-type amorphous semiconductor layer of a second buffer layer on a second surface of the semiconductor substrate, wherein the first p-type amorphous semiconductor layer is doped by a p-type semiconductor with a dope concentration ranged from 1×1014 to 1×1016 atoms/cm3;
- (e) forming a second intrinsic amorphous semiconductor layer of the second buffer layer on the first p-type amorphous semiconductor layer;
- (f) forming a second n-type amorphous semiconductor layer on the first buffer layer;
- (g) forming a second p-type amorphous semiconductor layer on the second buffer layer;
- and
- (h) forming a first TCO layer and a second TCO layer on the first amorphous semiconductor layer and the second amorphous semiconductor layer, respectively.
Dependencies are inferred from the claim text.