Thin film transistor, display apparatus including the thin film transistor, and method of manufacturing the thin film transistor
AssigneeSamsung Display Co., Ltd.
InventorsYUL-KYU LEE, Kyu-Sik Cho, Sun Park
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Abstract
A thin film transistor includes: a substrate, a semiconductor layer disposed on the substrate, a first gate electrode and a second gate electrode disposed on the semiconductor layer, a gate insulating layer disposed between the semiconductor layer and the first and second gate electrodes and having a first through hole between the first and second gate electrodes and a capping layer covering the first gate electrode and contacting the semiconductor layer via the first through hole. The capping layer includes a conductive material.
Claims14
A method of manufacturing a thin film transistor, comprising:
- forming a semiconductor layer on a substrate;
- forming a gate insulating layer covering the semiconductor layer;
- forming a first gate electrode and a second gate electrode on the gate insulating layer;
- forming a first through hole in a region of the gate insulating layer between the first gate electrode and the second gate electrode exposing the semiconductor layer;
- and
- forming a capping layer including a conductive material covering the second gate electrode and contacting the semiconductor layer via the first through hole.
A method of manufacturing a thin film transistor, comprising:
- forming a semiconductor layer on a substrate;
- forming a gate insulating layer covering the semiconductor layer;
- forming a first gate electrode and a second gate electrode on the gate insulating layer;
- forming an interlayer insulating layer covering the first gate electrode and the second gate electrode;
- forming a first through hole in a region of the gate insulating layer and the interlayer insulating layer between the first gate electrode and the second gate electrode exposing the semiconductor layer;
- and
- forming a capping layer including a conductive material covering a region of the interlayer insulating layer corresponding to the first gate electrode and contacting the semiconductor layer via the first through hole.
Dependencies are inferred from the claim text.