Non-volatile memory and fabricating method thereof

A fabricating method of a non-volatile memory, comprising:

• forming a first conductive layer and a second conductive layer separated from each other on a substrate, wherein a patterned hard mask layer is formed on the first conductive layer and on the second conductive layer, and the patterned hard mask layer exposes a sharp tip of the first conductive layer;
• forming a first doped region in the substrate at one side of the first conductive layer away from the second conductive layer;
• forming a second doped region in the substrate at one side of the second conductive layer away from the first conductive layer;
• and
• forming a third conductive layer at one side of the first conductive layer away from the second conductive layer, wherein the third conductive layer is located on a portion of the first conductive layer and covers the sharp tip, and the third conductive layer and the first conductive layer are isolated from each other,
• wherein the first doped region is disposed at least directly below the third conductive layer.