Semiconductor device and electronic device including the semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorTetsuhiro TANAKA
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Abstract
In a semiconductor device including a transistor, an oxygen release type oxide insulating film is formed in contact with a channel formation region of the transistor. The channel formation region is formed in an oxide semiconductor film. Oxygen is supplied from the oxide insulating film to the oxide semiconductor film. Further, an oxygen barrier film which penetrates the oxide insulating film is formed around the channel formation region, whereby a diffusion of oxygen to the wiring, the electrode, and the like connected to the transistor can be suppressed.
Claims18
A semiconductor device comprising:
- an oxide insulating film;
- a transistor comprising an oxide semiconductor film;
- a wiring electrically connected to the transistor;
- and
- a first oxygen barrier film in contact with the wiring,
- wherein the oxide semiconductor film is over the oxide insulating film,
- wherein the oxide semiconductor film comprises a channel formation region,
- wherein the first oxygen barrier film penetrates the oxide insulating film,
- wherein the first oxygen barrier film comprises aluminum oxide, and
- wherein the wiring comprises tungsten.
A semiconductor device comprising:
- an oxide insulating film;
- a transistor comprising an oxide semiconductor film;
- a wiring electrically connected to the transistor;
- and
- a first oxygen barrier film in contact with the wiring,
- wherein the oxide semiconductor film is over the oxide insulating film,
- wherein the oxide semiconductor film comprises a channel formation region,
- wherein the first oxygen barrier film penetrates the oxide insulating film,
- wherein the first oxygen barrier film comprises tantalum nitride, and
- wherein the wiring comprises tungsten.
A semiconductor device comprising:
- an oxide insulating film;
- a transistor comprising an oxide semiconductor film;
- a wiring electrically connected to the transistor;
- and
- a first oxygen barrier film in contact with the wiring,
- wherein the oxide semiconductor film is over the oxide insulating film,
- wherein the oxide semiconductor film comprises a channel formation region,
- wherein the first oxygen barrier film penetrates the oxide insulating film,
- wherein the first oxygen barrier film comprises ruthenium oxide, and
- wherein the wiring comprises tungsten.
Dependencies are inferred from the claim text.