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US 2016/0240682 A1Published application
Oxide semiconductor film and semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsAkihisa SHIMOMURA, Junichi KOEZUKA, Kenichi OKAZAKI, Yasumasa YAMANE, Yuhei SATO, Shunpei YAMAZAKI
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Abstract
To provide a novel oxide semiconductor film. The oxide semiconductor film includes In, M, and Zn. The M is Al, Ga, Y, or Sn. In the case where the proportion of In in the oxide semiconductor film is 4, the proportion of M is greater than or equal to 1.5 and less than or equal to 2.5 and the proportion of Zn is greater than or equal to 2 and less than or equal to 4.
Claims20
An oxide semiconductor film comprising In, M, and Zn,
- wherein the oxide semiconductor film has a composition in a neighborhood of a solid solution range of an In1+xM1−xO3(ZnO)y structure,
- wherein the M is Al, Ga, Y, or Sn,
- wherein x is approximately 0.33, and
- wherein y is approximately 1.
1 more element
An oxide semiconductor film comprising In, M, and Zn,
- wherein the oxide semiconductor film has a composition in a neighborhood of a solid solution range of an In1+xM1−xO3(ZnO)y structure,
- wherein the M is Al, Ga, Y, or Sn,
- wherein x satisfies 0<x<0.5, and
- wherein y is approximately 1.
1 more element
An oxide semiconductor film comprising:
- a first film;
- and
- a second film over the first film,
- wherein each of the first film and the second film comprises In, M, and Zn,
- wherein the M is Al, Ga, Y, or Sn,
- wherein the first film has a composition in a neighborhood of a solid solution range of an In1+xM1−xO3(ZnO)y structure,
- wherein the second film comprises a region having a composition in a neighborhood of a solid solution range of an In1+vM1−vO3(ZnO)w structure and having a smaller proportion of indium atoms than the first film,
- wherein x satisfies 0<x<0.5,
- wherein y is approximately 1,
- wherein v satisfies −0.2≦v<0.2, and
- wherein w is approximately 1.
8 more elements
Dependencies are inferred from the claim text.