Epitaxial wafer and method of manufacturing the same
AssigneeSumco Corporation
InventorsToshiaki ONO, Yumi HOSHINO
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Abstract
A method of manufacturing an epitaxial wafer, including a silicon substrate having a surface sliced from single-crystalline silicon and a silicon epitaxial layer deposited on the surface of the silicon substrate, includes an oxygen concentration controlling heat treatment process in which a heat treatment of the epitaxial layer is performed under a non-oxidizing atmosphere after the epitaxial growth such that an oxygen concentration of the surface of the silicon epitaxial layer is set to 1.0×1017 to 12×1017 atoms/cm3 (ASTM F-121, 1979).
Claims9
A method of manufacturing an epitaxial wafer including a silicon substrate which is sliced from a single-crystalline silicon and has a surface, and a silicon epitaxial layer deposited on the surface of the silicon substrate, the method comprising an oxygen concentration controlling heat treatment process in which a heat treatment of the epitaxial wafer is performed under a non-oxidizing atmosphere after the epitaxial growth such that an oxygen concentration of the surface of the silicon epitaxial layer is set to 1.0×1017 to 12×1017 atoms/cm3 (ASTM F-121, 1979).
A method of manufacturing an epitaxial wafer including a silicon substrate which is sliced from a single-crystalline silicon and has a surface, and a silicon epitaxial layer deposited on the surface of the silicon substrate, the method comprising:
- an oxygen concentration controlling heat treatment process in which an oxygen concentration of the silicon epitaxial layer is raised under a non-oxidizing atmosphere after the epitaxial growth;
- and
- a surface removal process in which the surface is removed such that the oxygen concentration of the surface of the silicon epitaxial layer is set to 1.0×1017 to 12×1017 atoms/cm3 (ASTM F-121, 1979).
Dependencies are inferred from the claim text.