Reacted Conductive Gate Electrodes and Methods of Making the Same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMatthew T. Currie, Richard Hammond
Life of this patent
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Abstract
A semiconductor device and a method for fabricating a semiconductor device involve a semiconductor layer that includes a first material and a second material. The first and second materials can be silicon and germanium. A contact of the device has a portion proximal to the semiconductor layer and a portion distal to the semiconductor layer. The distal portion includes the first material and the second material. A metal layer formed adjacent to the relaxed semiconductor layer and adjacent to the distal portion of the contact is simultaneously reacted with the relaxed semiconductor layer and with the distal portion of the contact to provide metallic contact material.
Claims20
A method comprising:
- forming a strained layer over a relaxed layer;
- forming a gate dielectric layer over a portion of the strained layer, the gate dielectric layer defining a strained channel region in the strained layer;
- forming a source contact and a drain contact proximate the strained channel region comprising:
- depositing a metallic material;
- and
- performing a first annealing step, each of the source contact and drain contact comprising a reacted conductive silicide layer, the reacted conductive silicide layer comprising portion of the strained layer and the metallic material;
- and
- forming a gate contact over at least a portion of the gate dielectric layer comprising:
- depositing the metallic material;
- and
- performing a second annealing step, the gate contact including a reacted conductive silicide portion comprising a semiconductor material and the metallic material.
A device comprising:
- a substrate comprising a strained layer over a relaxed layer;
- and
- a gate stack over the substrate, the gate stack comprising a gate electrode over a dielectric layer, the gate electrode comprising a first portion comprising a first material and a second portion comprising the first material, a second material, and a metal reacted with the first material and the second material, the first portion being disposed between the second portion and the dielectric layer, a composition of the first material between the first portion and the second portion being graded.
A structure comprising:
- a strained layer over a relaxed layer;
- a dielectric layer over the strained layer;
- a first reacted conductive silicide layer in the strained layer and the relaxed layer, the first reacted conductive silicide layer comprising a first material, a second material, and a metal reacted with the first material and the second material;
- and
- a gate contact over the dielectric layer, the gate contact comprising a second reacted conductive silicide layer, the second reacted conductive silicide layer comprising the first material, the second material, and the metal reacted with the first material and the second material.
Dependencies are inferred from the claim text.