Method for manufacturing semiconductor device with recess, epitaxial growth and diffusion
AssigneeSony Corporation
InventorTakuji Matsumoto
Life of this patent
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Abstract
A semiconductor device including a gate electrode disposed on a semiconductor substrate and source/drain regions disposed at both sides of the gate electrode, the source/drain regions being formed by implanting impurities. The source/drain regions include an epitaxial layer formed by epitaxially growing a semiconductor material having a different lattice constant from that of the semiconductor substrate in a recessed position at a side of the gate electrode, and a diffusion layer disposed in a surface layer of the semiconductor substrate.
Claims20
A semiconductor device comprising:
- a substrate;
- a gate electrode on the substrate;
- a diffusion region comprising impurities in a surface portion of the substrate;
- and
- an epitaxial region having a lattice constant different from a lattice constant of the substrate, the epitaxial region being between the gate electrode and the diffusion region along a channel length direction of the semiconductor device,
- wherein,
- a source/drain region includes the epitaxial region and the diffusion region, and
- a depth of the diffusion region within the substrate is greater than a depth of the epitaxial region within the substrate.
The semiconductor device of claim 15, wherein the contact includes at least tungsten.
A semiconductor device comprising:
- a substrate;
- a gate electrode on the substrate;
- a diffusion region comprising impurities in a surface portion of the substrate;
- an epitaxial region comprising a semiconductor material having a lattice constant different from a lattice constant of the substrate, the epitaxial region being between the gate electrode and the diffusion region along a channel length direction of the semiconductor device;
- an element isolation layer in the substrate, the element isolation layer comprising an insulating material, and
- wherein,
- a source/drain region includes the epitaxial region and the diffusion region,
- the diffusion region is between the epitaxial region and the element isolation layer along the channel length direction of the semiconductor substrate, and
- the element isolation layer and the epitaxial region do not contact each other.
Dependencies are inferred from the claim text.