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US 2016/0240673 A1Published application
Methods and Apparatus for Doped SiGe Source/Drain Stressor Deposition
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChao-Hsuing Chen, Ling-Sung Wang, Chi-Yen Lin
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Abstract
A method of manufacturing a semiconductor device includes etching a recess into a substrate and epitaxially growing a source/drain region in the recess. The source/drain region includes a first undoped layer of stressor material lining the recess, a lightly doped layer of stressor material over the first undoped layer, a second undoped layer of stressor material over the lightly doped layer, and a highly doped layer of stressor material over the second undoped layer.
Claims20
A semiconductor device comprising:
- a source region recess and a drain region recess formed in a semiconductor substrate;
- and
- wherein each of the source region and the drain region recesses is filled with a first non-planar layer of undoped stressor material layer, a second non-planar layer of doped stressor material including dopant atoms, a doped layer of stressor material having a concentration of dopant atoms greater than the second non-planar layer of doped stressor material, and a cap layer over the doped layer and having a concentration of dopant atoms greater than the doped layer, and a third undoped layer of stressor material free from dopant atoms disposed between the second non-planar layer of doped stressor material and the doped layer of stressor material.
A semiconductor device comprising:
- a substrate including a source recess having a v-shaped sidewall and a drain recess having a V-shaped sidewall;
- a plurality of doped stressor layers in each of the recesses, comprising:
- a first non-planar layer of stressor material having a first dopant concentration;
- a second non-planar layer of stressor material over the first non-planar layer and having a second dopant concentration higher than the first dopant concentration,
- a third layer of stressor material over and extending into the second non-planar layer of stressor, the third layer of stress material having a third dopant concentration greater than the second dopant concentration,
- a third non-planar layer of stressor material between the first non-planar layer of stress material and the second non-planar layer of stressor material, the third non-planar layer of stress material having a dopant concentration substantially equal to the first dopant concentration;
- and
- a cap layer of doped stressor material overlying the third layer of stressor material and having a fourth dopant concentration greater than the third dopant concentration.
5 more elements
A semiconductor device comprising:
- a source region recess and a drain region recess formed in a semiconductor substrate;
- wherein the source region, the drain region, or both is filled with a first non-planar layer of undoped stressor material layer, a second non-planar layer of doped stressor material including dopant atoms, a doped layer of stressor material having a concentration of dopant atoms greater than the second non-planar layer of doped stressor material, and a cap layer over the doped layer and having a concentration of dopant atoms greater than the doped layer, and a third undoped layer of stressor material free from dopant atoms disposed between the second non-planar layer of doped stressor material and the doped layer of stressor material;
- and
- wherein the doped layer of stressor material has a topmost surface that is above a topmost surface of the semiconductor substrate.
1 more element
Dependencies are inferred from the claim text.