Ultra high voltage device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMING-FU TSAI, YU-TI SU, JEN-CHOU TSENG
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Abstract
According to an embodiment, a semiconductor device is provided. The device includes: The second region has a greater curvature than the first region. The device includes: an N-type epitaxy layer; a P-well in the N-type epitaxy layer; a drain in the N-type epitaxy layer; a source in the P-well; and a bulk in the P-well and in contact with the source, wherein the bulk has a greater area in the second region than in the first region.
Claims23
A semiconductor device having a first region and a second region, the second region having a greater curvature than the first region, the device comprising:
- an N-type epitaxy layer in the first region and the second region;
- a P-well in the N-type epitaxy layer;
- a first N+ diffusion layer in the N-type epitaxy layer;
- a second N+ diffusion layer in the P-well;
- and
- a P+ diffusion layer in the P-well and in contact with the second N+ diffusion layer, wherein the P+ diffusion layer (i) has a greater area in the second region than in the first region, and (ii) comprises a greater extension in the second region than in the first region.
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10-16. (canceled)
A semiconductor device having a first region and a second region, the second region having greater a curvature than the first region, the device comprising:
- an N-type epitaxy layer in the first region and the second region;
- a P-well in the N-type epitaxy layer;
- a drain in the N-type epitaxy layer;
- a source in the P-well;
- and
- a bulk in the P-well and in contact with the source, wherein the bulk (i) has a greater area in the second region than in the first region, and (ii) comprises a greater extension in the second region than in the first region.
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A semiconductor device having a first region and a second region, the second region having a greater curvature than the first region, the device comprising:
- an N-type epitaxy layer in the first region and the second region;
- a P-well in the N-type epitaxy layer;
- an N-type diffusion layer in the N-type epitaxy layer;
- a second N-type diffusion layer in the P-well;
- and
- a P-type diffusion layer in the P-well and in contact with the second N-type diffusion layer, wherein the P-type diffusion layer (i) has a greater area in the second region than in the first region, and (ii) comprises a greater extension in the second region than in the first region.
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Dependencies are inferred from the claim text.