Semiconductor device and manufacturing method thereof

A manufacturing method of a semiconductor device, the method comprising:

• forming a first gate dielectric film on a first semiconductor layer,
• forming a gate electrode on the first gate dielectric film;
• forming a source layer of a first conductivity type in the first semiconductor layer on one side of the gate electrode;
• forming a drain layer of a second conductivity type in the first semiconductor layer on other side of the gate electrode;
• forming a second gate dielectric film on a side surface of the gate electrode on the one side;
• forming a second semiconductor layer of which a first side surface faces the side surface of the gate electrode via the second gate dielectric film;
• introducing first conductivity-type impurities to a second side surface of the second semiconductor layer on an opposite side to the first side surface;
• and
• forming a silicide layer on the second side surface of the second semiconductor layer, to which the first conductivity-type impurities are introduced.

A manufacturing method of a semiconductor device, the method comprising:

• forming a sacrifice gate electrode above a first semiconductor layer;
• forming a source layer of a first conductivity type in the first semiconductor layer on one side of the sacrifice gate electrode;
• forming a drain layer of a second conductivity type in the first semiconductor layer on other side of the sacrifice gate electrode;
• forming a second semiconductor layer of which a first side surface faces a side surface of the sacrifice gate electrode on the one side;
• introducing first conductivity-type impurities to a second side surface of the second semiconductor layer on an opposite side to the first side surface;
• forming a silicide layer on the second side surface of the second semiconductor layer, to which the first conductivity-type impurities are introduced;
• removing the sacrifice gate electrode after formation of the silicide layer to form a gate trench;
• and
• forming a gate electrode in the gate trench to be in contact with a first gate dielectric film formed on the first semiconductor layer and with a second gate dielectric film formed on the first side surface of the second semiconductor layer.