Power integrated devices, electronic devices including the same, and electronic systems including the same

Abstract

A power integrated device includes a semiconductor layer having first conductivity, a source region and a drain region each having second conductivity and disposed in the semiconductor layer, wherein the source region and the drain region are spaced apart from each other, a first drift region having the second conductivity, disposed in the semiconductor layer, and surrounding the drain region, a second drift region having the second conductivity, disposed in the semiconductor layer, contacting a sidewall of the first drift region, and having an impurity concentration lower than an impurity concentration of the first drift region, a gate insulation layer disposed over a channel region between the source region and the second drift region and extending over the second drift region, a field insulation plate disposed over the second drift region and the first drift region, contacting a sidewall of the gate insulation layer, and having a planar structure, and a gate conductive pattern disposed over the gate insulation layer, wherein the gate conductive pattern extends over the field insulation plate.

Dependencies are inferred from the claim text.