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US 2016/0240657 A1Published application
Semiconductor device having buried layer
AssigneeMacronix International Co., Ltd.
InventorsChing-Lin CHAN, Shyi-Yuan WU, Cheng-Chi LIN
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Abstract
A semiconductor device includes a substrate having a first conductivity type, a high-voltage well having a second conductivity type and formed in the substrate, a drift region formed in the high-voltage well, and a buried layer having the first conductivity type formed below the high-voltage well and vertically aligned with the drift region.
Claims20
A semiconductor device, comprising:
- a substrate having a first conductivity type;
- a high-voltage well having a second conductivity type and formed in the substrate;
- a drift region formed in the high-voltage well;
- and
- a buried layer having the first conductivity type formed below the high-voltage well and vertically aligned with the drift region,
- wherein the drift region includes:
- a top region having the first conductivity type and formed in the high-voltage well;
- and
- a grade region having the second conductivity type and formed above the too region.
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(canceled)
A method for fabricating a semiconductor device, the method comprising:
- providing a substrate having a first conductivity type;
- forming a buried layer having the first conductivity type in the substrate;
- forming an epitaxial layer having the first conductivity type over the substrate formed with the buried layer;
- forming a high-voltage well having a second conductivity type in the epitaxial layer;
- and
- forming a drift region in the high-voltage well, the drift region being vertically aligned with the buried layer.
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Dependencies are inferred from the claim text.