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US 2016/0240655 A1Published application
Method for manufacturing silicon carbide semiconductor device
AssigneeSumitomo Electric Industries, Ltd.
InventorTakeyoshi Masuda
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Abstract
A method for manufacturing a SiC semiconductor device includes the steps of: forming an impurity region in a SiC layer; forming a first carbon layer on a surface of the SiC layer having the impurity region formed therein, by selectively removing silicon from the surface; forming a second carbon layer on the first carbon layer; and heating the SiC layer having the first carbon layer and the second carbon layer formed therein.
Claims17
A method for manufacturing a silicon carbide semiconductor device, comprising the steps of:
- forming an impurity region in a silicon carbide layer;
- forming a first carbon layer on a surface of the silicon carbide layer having the impurity region formed therein, by selectively removing silicon from the surface;
- forming a second carbon layer on the first carbon layer;
- and
- heating the silicon carbide layer having the first carbon layer and the second carbon layer formed therein.
2 more elements
Dependencies are inferred from the claim text.