Semiconductor Devices and a Method for Forming a Semiconductor Device
AssigneeInfineon Technologies AG
InventorsHans-Joachim Schulze, Philip Christoph Brandt, Andre Rainer Stegner
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Abstract
Some embodiments relate to a method for forming a semiconductor device. The method includes forming a source region of a field effect transistor structure in a semiconductor substrate. The method further includes forming an oxide layer. The method also includes incorporating atoms of at least one atom type of a group of atom types into at least a part of the source region of the field effect transistor structure after forming the oxide layer. The group of atom types includes chalcogen atoms, silicon atoms and argon atoms.
Claims21
A method for forming a semiconductor device, the method comprising:
- forming a source region of a field effect transistor structure in a semiconductor substrate;
- forming an oxide layer;
- and
- incorporating atoms of at least one atom type of a group of atom types into at least a part of the source region of the field effect transistor structure after forming the oxide layer, wherein the group of atom types comprises chalcogen atoms, silicon atoms and argon atoms, wherein a portion of the source region is removed before incorporating the atoms of the at least one atom type.
A semiconductor device, comprising:
- a body region of a field effect transistor structure formed between a drift region of the field effect transistor structure and a source region of the field effect transistor structure,
- wherein the semiconductor substrate comprises chalcogen atoms at an atom concentration of less than 1×1013 cm−3 at a p-n junction between the body region and the drift region,
- wherein at least part of the source region comprises the chalcogen atoms at an atom concentration of greater than 1×1014 cm−3.
A semiconductor device, comprising:
- a body region of a field effect transistor structure formed in a semiconductor substrate and a source region formed adjacent to the body region, wherein at least part of the source region comprises chalcogen atoms at an atom concentration of greater than 1×1013 cm−3;
- a contact trench extending into the semiconductor substrate;
- and
- an electrode structure formed in the contact trench, wherein the electrode structure is in contact with the body region at the bottom of the contact trench and in contact with the source region at a sidewall of the contact trench.
Dependencies are inferred from the claim text.