Power semiconductor device

A power semiconductor device comprising:

• a semiconductor substrate having a first surface and a second surface opposite said first surface, said semiconductor substrate including a first region having a first conductivity type, a second region provided on said first region and having a second conductivity type different from said first conductivity type, and a third region provided on said second region and arranged in said second surface and having said first conductivity type, said second surface being provided with a plurality of first trenches and a plurality of second trenches, said first trenches facing said first to third regions;
• a first main electrode provided on said first surface of said semiconductor substrate;
• a trench insulating film covering said first trenches and said second trenches of said semiconductor substrate;
• a gate electrode having parts buried in said first trenches with said trench insulating film therebetween;
• a capacitor electrode having parts buried in said second trenches with said trench insulating film therebetween;
• an interlayer insulating film provided on said second surface and having a first contact hole and a second contact hole;
• and
• a second main electrode provided on said interlayer insulating film, contacting said third region through said first contact hole, and contacting said capacitor electrode through said second contact hole, wherein
• said second surface of said semiconductor substrate has a first range in one direction on said second surface and a second range out of said first range toward said one direction,
• each of said first trenches and each of said second trenches cross said first range in said one direction,
• regarding said first and second ranges, said first contact hole is located only in said first range and said second contact hole is located only in said second range,
• said second surface of said semiconductor substrate has a third range out of said second range toward said one direction,
• said first trenches extend from said first range into said third range through said second range, and
• said second trenches each have an end portion located in said second range.