Semiconductor device
AssigneeRenesas Electronics Corporation
InventorSADAYUKI OHNISHI
Life of this patent
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Abstract
A p-type well is formed in a semiconductor substrate, and an n+-type semiconductor region and a p+-type semiconductor region are formed in the p-type well to be spaced apart from each other. The n+-type semiconductor region is an emitter semiconductor region of a bipolar transistor, and the p-type well and the p+-type semiconductor region are base semiconductor regions of the bipolar transistor. An electrode is formed on an element isolation region between the n+-type semiconductor region and the p+-type semiconductor region, and at least a part of the electrode is buried in a trench which is formed in the element isolation region. The electrode is electrically connected to the n+-type semiconductor region.
Claims15
A semiconductor device provided with a bipolar transistor, comprising:
- a semiconductor substrate;
- a first semiconductor region of a first conductivity type which is formed in the semiconductor substrate;
- a second semiconductor region of the first conductivity type and a third semiconductor region of a second conductivity type opposite to the first conductivity type which are formed to be spaced apart from each other in the first semiconductor region;
- an element isolation insulating film which is formed on a main surface of the semiconductor substrate between the second semiconductor region and the third semiconductor region;
- a first electrode which is formed on the element isolation insulating film;
- an interlayer insulating film which is formed on the semiconductor substrate so as to cover the element isolation insulating film and the first electrode;
- and
- a first plug, a second plug, and a third plug which are buried in the interlayer insulating film,
- wherein an impurity concentration of the second semiconductor region is higher than an impurity concentration of the first semiconductor region,
- the first semiconductor region and the second semiconductor region are base semiconductor regions of the bipolar transistor,
- the third semiconductor region is an emitter semiconductor region of the bipolar transistor,
- the first plug is disposed on the third semiconductor region and is electrically connected to the third semiconductor region,
- the second plug is disposed on the first electrode and is electrically connected to the first electrode,
- the third plug is disposed on the second semiconductor region and is electrically connected to the second semiconductor region,
- the first plug and the second plug are electrically connected,
- the first electrode is formed between the second semiconductor region and the third semiconductor region when seen in a plan view, and
- at least a part of the first electrode is buried in a first trench which is formed in the element isolation insulating film.
Dependencies are inferred from the claim text.