Method of manufacturing thin-film transistor substrate
AssigneeJoled Inc.
InventorEiichi SATOH
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Abstract
A method of manufacturing a thin-film transistor substrate that includes a thin-film transistor having a semiconductor layer, includes: forming a CuMn alloy film (third conductive film) above a substrate; forming a first silicon oxide film (first insulation film) on the CuMn alloy film at a first temperature; forming an aluminum oxide film (second insulation film) on the first silicon oxide film; and forming a second silicon oxide film (third insulation film) on the aluminum oxide film at a second temperature higher than the first temperature.
Claims12
A method of manufacturing a thin-film transistor substrate that includes a thin-film transistor having a semiconductor layer, the method of manufacturing the thin-film transistor substrate comprising:
- forming a CuMn alloy film above a substrate;
- forming a first silicon oxide film on the CuMn alloy film at a first temperature;
- forming an aluminum oxide film on the first silicon oxide film;
- and
- forming a second silicon oxide film on the aluminum oxide film at a second temperature higher than the first temperature.
Dependencies are inferred from the claim text.