Semiconductor device structure and method for forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorJi-Feng LIU
Life of this patent
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Abstract
A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a first trench between a first active region and a second active region of the substrate. The semiconductor device structure includes an isolation structure in the first trench. The isolation structure includes a liner layer, an insulating layer, and an isolation layer. The liner layer covers an inner wall and a bottom surface of the first trench. The insulating layer covers the liner layer and has a second trench in the first trench. The isolation layer is over the insulating layer and fills the second trench. A first thickness of the insulating layer is greater than a second thickness of the liner layer.
Claims21
A semiconductor device structure, comprising:
- a substrate having a first trench between a first active region and a second active region of the substrate;
- and
- an isolation structure in the first trench, wherein the isolation structure comprises a liner layer, an insulating layer, and an isolation layer, the liner layer covers an inner wall and a bottom surface of the first trench, the insulating layer covers the liner layer and has a second trench in the first trench, the isolation layer is over the insulating layer and fills the second trench, a first thickness of the insulating layer is greater than a second thickness of the liner layer, a first portion of the insulating layer and a second portion of the isolation layer are outside of the first trench, and a first top surface of the first portion is aligned with a second top surface of the second portion.
A semiconductor device structure, comprising:
- a substrate having a first fin structure and a second fin structure, wherein the substrate has a first trench between the first fin structure and the second fin structure;
- an isolation structure filling a first portion of the first trench, wherein the isolation structure comprises a liner layer, an insulating layer, and an isolation layer, the liner layer covers an inner wall and a bottom surface of the first trench, the insulating layer covers the liner layer and has a second trench in the first trench, the isolation layer is over the insulating layer and fills the second trench, and a first thickness of the insulating layer is greater than a second thickness of the liner layer;
- and
- a gate stack over the first fin structure and the isolation structure.
16-20. (canceled)
A semiconductor device structure, comprising:
- a substrate having a first fin structure and a second fin structure, wherein the substrate has a first trench between the first fin structure and the second fin structure;
- an isolation structure filling a first portion of the first trench, wherein the isolation structure comprises a liner layer, an insulating layer, and an isolation layer, the liner layer covers an inner wall and a bottom surface of the first trench, the insulating layer covers the liner layer and has a second trench in the first trench, the isolation layer is over the insulating layer and fills the second trench, a first thickness of the insulating layer is greater than a second thickness of the liner layer, and the isolation layer comprises nitrogen;
- and
- a gate stack over the first fin structure and the isolation structure.
Dependencies are inferred from the claim text.