Image sensor and imaging apparatus including the same
AssigneeSamsung Electronics Co., Ltd.
InventorBYUNG-JOON BAEK
Life of this patent
Estimating the term…
Abstract
Provided are an image sensor and an imaging apparatus. The image sensor of a multi-layered sensor structure, the image sensor includes a plurality of sensing pixels, each of the plurality of sensing pixels including a micro lens configured to collect light, a first photoelectric converter configured to convert light of a first wavelength band into an electric signal, and a second photoelectric converter formed on a substrate configured to convert incident light into the electric signal, wherein a central axis of the second photoelectric converter is spaced apart from an optical axis of the micro lens.
Claims23
An image sensor of a multi-layered sensor structure, the image sensor comprising:
- a plurality of sensing pixels, each of the plurality of sensing pixels including,
- a micro lens configured to collect light,
- a first photoelectric converter configured to convert the light of a first wavelength band into an electrical signal, and
- a second photoelectric converter on a substrate, the second photoelectric converter configured to convert the light of one or more remaining wavelength bands outside the first wavelength band into the electrical signal, wherein,
- a central axis of the second photoelectric converter is spaced apart from an optical axis of the micro lens.
16-27. (canceled)
An imaging apparatus comprising:
- a lens configured to collect light reflected from a subject;
- and
- an image sensor of a multi-layered sensor structure, the image sensor including a pixel array having a plurality of pixels, at least one of the plurality of pixels being a focusing pixel, the focusing pixel including,
- a micro lens,
- a first photoelectric converter configured to convert light of a first wavelength band into the electrical signal, and
- a second photoelectric converter including a first photoelectric conversion device spaced apart from an optical axis of the micro lens, the second photoelectric converter configured to convert light of a second wavelength band into the electrical signal.
29-35. (canceled)
An image sensor having a multi-layered structure, the image sensor comprising:
- a plurality of sensing pixels, the plurality of sensing pixels including,
- a micro lens configured to collect incident light, and
- a plurality of photoelectric converters sequentially stacked under the micro lens, the plurality of photoelectric converters configured to selectively convert different wavelength bands of the incident light into different electrical signals, and at least one of the plurality of photoelectric converters having one or more photoelectric conversion devices formed in a substrate, the one or more photoelectric conversion devices being spaced apart based on an optical axis of the micro lens.
(canceled)
Dependencies are inferred from the claim text.