Semiconductor structure having a center dummy region

A semiconductor structure, comprising:

• a substrate with a device region, wherein the device region is a memory region, wherein the device region comprises a first functional region and a second functional region, and a dummy region is disposed therebetween, wherein the first functional region is a memory cell region;
• a plurality of first semiconductor devices and a plurality of first slot contacts disposed in the first functional region, wherein a plurality of fin structures stretching along a first direction and a plurality of gate structures stretching along a second direction are disposed in the first functional region, intersecting with each other, thereby forming the plural first semiconductor devices;
• a plurality of second semiconductor devices and a plurality of second slot contacts disposed in the second functional region;
• and
• a plurality of dummy slot contacts disposed in the dummy region.