Method for manufacturing semiconductor device
AssigneeFuji Electric Co., Ltd.
InventorShoji SAKAGUCHI
Life of this patent
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Abstract
A method for manufacturing a semiconductor device includes a first step of forming a first electrode on one main surface side of a semiconductor wafer; a second step of bonding a first film to another main surface side of the semiconductor wafer; a third step of bonding a second film to an outer peripheral portion of the semiconductor wafer by applying pressure to the second film on the semiconductor wafer using a plurality of cylindrical rollers, after the second step; and a fourth step of forming a plating layer on the first electrode on the one main surface side of the semiconductor wafer by a plating process, after the third step.
Claims17
A method for manufacturing a semiconductor device, comprising:
- a first step of forming a first electrode on one main surface side of a semiconductor wafer;
- a second step of bonding a first film to another main surface side of the semiconductor wafer at a side opposite to the one main surface;
- a third step of bonding, after the second step, a second film to an outer peripheral portion of the semiconductor wafer by applying pressure to the second film on the semiconductor wafer using a plurality of cylindrical rollers;
- and
- a fourth step of forming, after the third step, a plating layer on the first electrode on the one main surface side of the semiconductor wafer by a plating process.
Dependencies are inferred from the claim text.