Method for fabricating semiconductor devices having reinforcing elements
AssigneeAsia Pacific Microsystems, Inc.
InventorHung-Lin Yin
Life of this patent
Estimating the term…
Abstract
The present disclosure provides a method for fabricating semiconductor devices having reinforcing elements. The method includes steps of providing a first wafer having a lower electrode layer and an insulation layer; forming a device layer; etching the device layer and the insulation layer to form recesses; etching the device layer to form separation trenches and upper electrodes; forming reinforcing elements; and depositing metal pads. The reinforcing elements strengthen the integration of the upper electrodes and the insulation layer.
Claims19
A method for fabricating semiconductor devices, the method comprising the steps of:
- providing a wafer;
- forming a device layer on a top surface of the wafer;
- etching the device layer to form a plurality of separation trenches so as to expose a plurality of sections of the wafer, the plurality of separation trenches separating the device layer into a plurality of structure members;
- and
- forming one or more reinforcing elements connecting one or more structure members of the plurality of structure members to the wafer so as to strengthen an integration of the plurality of structure members and the wafer;
- wherein the one or more reinforcing elements are made of a dielectric material.
A method for fabricating semiconductor devices, the method comprising the steps of:
- providing a first wafer having a lower electrode layer and an insulation layer on top of the lower electrode layer, the insulation layer having a plurality of grooves;
- forming a device layer on a top surface of the insulation layer;
- etching the device layer and the insulation layer to form a plurality of recesses so as to expose a plurality of sections of a top surface of the lower electrode layer of the first wafer;
- etching the device layer to form a plurality of separation trenches so as to expose a plurality of sections of the top surface of the insulation layer, the plurality of separation trenches separating the device layer into a plurality of upper electrodes;
- forming a plurality of reinforcing elements covering at least portions of sidewalls of the plurality of separation trenches, at least portions of the plurality of exposed sections of the top surface of the insulation layer, and at least portions of top surfaces of the plurality of upper electrodes;
- and
- forming a first plurality of metal pads on the plurality of exposed sections of the top surface of the lower electrode layer of the first wafer and forming a second plurality of metal pads on the top surfaces of the plurality of upper electrodes.
A method for fabricating semiconductor devices, the method comprising the steps of:
- providing a wafer having a lower electrode layer and an insulation layer on top of the lower electrode layer, the insulation layer having a plurality of grooves;
- forming a device layer on a top surface of the insulation layer;
- etching the device layer and the insulation layer to form a plurality of recesses and a plurality of separation trenches so as to expose respectively a first and second pluralities of sections of a top surface of the lower electrode layer of the wafer, the plurality of separation trenches separating the device layer into a plurality of upper electrodes;
- forming a plurality of reinforcing elements covering at least portions of sidewalls of the plurality of separation trenches, at least portions of the second plurality of exposed sections of the top surface of the lower electrode layer, and at least portions of top surfaces of the plurality of upper electrodes;
- and
- depositing a first plurality of metal pads on the plurality of exposed sections of the top surface of the lower electrode layer of the wafer and depositing a second plurality of metal pads on the top surfaces of the plurality of upper electrodes.
Dependencies are inferred from the claim text.