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US 2016/0240478 A1Published application
Modified tungsten silicon
AssigneeGlobalfoundries Inc.
InventorsDomingo A. Ferrer, Kriteshwar K. Kohli, Siddarth A. Krishnan, Joseph F. Shepard, JR., Keith Kwong Hon Wong
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Abstract
A method for forming a precision resistor or an e-fuse structure where tungsten silicon is used. The tungsten silicon layer is modified by implanting nitrogen into the structure.
Claims20
A method of forming a semiconductor structure, the method comprising:
- forming a tungsten silicon layer on an insulator, wherein the tungsten silicon layer comprises tungsten and silicon;
- introducing nitrogen into the tungsten silicon layer to form a nitrogen-containing tungsten silicon layer, wherein the nitrogen-containing silicon layer contains nitrogen, wherein a concentration of nitrogen in the nitrogen-containing silicon layer is at least 1 mole %;
- and
- forming a first conductive material and a second conductive material on the tungsten silicon layer, wherein the nitrogen-containing tungsten silicon layer forms an electrical connection between the first conductive material and the second conductive material.
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A method of forming a semiconductor structure, the method comprising:
- forming a tungsten silicon layer on an insulator, wherein the tungsten silicon layer comprises tungsten and silicon, and the molar ratio of silicon to tungsten in the tungsten silicon layer is about 2.7;
- and
- implanting nitrogen into the tungsten silicon layer to form a nitrogen-containing tungsten silicon layer, wherein implanting nitrogen into the tungsten silicon layer comprises performing decoupled plasma nitridation having an implantation power of at least 500 W on the tungsten silicon layer.
A semiconductor structure comprising:
- an insulator;
- a nitrogen-containing tungsten silicon layer on the insulator, wherein the nitrogen-containing tungsten silicon layer comprises nitrogen, tungsten and silicon;
- a first conductive material contacting a first region of the nitrogen-containing tungsten silicon layer;
- and
- a second conductive material contacting a second region of the nitrogen-containing tungsten silicon layer, wherein the first conductive material and the second conductive material are electrically connected by the nitrogen-containing tungsten silicon layer.
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Dependencies are inferred from the claim text.