Method of Semiconductor Fabrication with Height Control Through Active Region Profile
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYi-Cheng Chao, Che-Cheng Chang, Po-Chi Wu, Jung-Jui Li
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Abstract
The present disclosure provides a method for fabricating an integrated circuit in accordance with some embodiments. The method includes forming a trench on a semiconductor substrate, thereby defining fin active regions; extracting a profile of the fin active regions; determining an etch dosage according to the profile of the fin active regions; filling in the trench with a dielectric material; and performing an etching process to the dielectric material using the etch dosage, thereby recessing the dielectric material and defining a fin height of the fin active regions.
Claims20
A method, comprising:
- forming a trench on a semiconductor substrate, thereby defining fin active regions;
- extracting a profile of the fin active regions;
- determining an etch dosage according to the profile of the fin active regions;
- filling in the trench with a dielectric material;
- and
- performing an etching process to the dielectric material using the etch dosage, thereby recessing the dielectric material and defining a fin height of the fin active regions.
A method, comprising:
- forming first trenches on a substrate, thereby defining first ridge features on the substrate;
- measuring a sidewall angle (SWA) of the first ridge features;
- determining an etch dosage according to the SWA and a desired height;
- filling in the first trench with a material;
- and
- performing an etching process to the material with the etch dosage, thereby recessing the material and defining the first ridge features having the desired height.
A system for semiconductor fabrication, comprising:
- a metrology tool operable to measure profile of a fin active region formed on a semiconductor substrate;
- an etch apparatus operable to perform an etching process to the semiconductor substrate;
- and
- a manufacturing module coupled with the metrology tool and the etch apparatus, wherein the manufacturing module is designed to determine an etch dosage based on the profile of the fin active region.
Dependencies are inferred from the claim text.