Semiconductor Device and Method of Forming the Same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHarry-Hak-Lay Chuang, Chung-Hau Fei, Bao-Ru Young, Ming Zhu, Sin-Hua Wu
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Abstract
A method of forming a semiconductor device includes forming a gate stack over a substrate, forming an amorphized region in the substrate adjacent to an edge of the gate stack, forming a stress film over the substrate, performing a process to form a dislocation with a pinchoff point in the substrate, removing at least a portion of the dislocation to form a recess cavity with a tip in the substrate, and forming a source/drain feature in the recess cavity.
Claims20
A method of manufacturing a semiconductor device, comprising:
- forming a first gate structure and a second gate structure over a substrate;
- forming a first amorphized region in the substrate adjacent to the first gate structure and a second amorphized region in the substrate adjacent to the second gate structure;
- depositing a stress film over the first and the second amorphized regions;
- performing an annealing process to form a first dislocation in the substrate adjacent to the first gate structure and a second dislocation in the substrate adjacent to the second gate structure;
- removing the second dislocation to form a recess cavity adjacent to the second gate structure while leaving the first dislocation adjacent to the first gate structure;
- and
- forming a source/drain feature in the recess cavity.
A semiconductor device comprising:
- a semiconductor substrate having a surface;
- a first gate structure and a second gate structure over the semiconductor substrate;
- a dislocation with a pinchoff point in the semiconductor substrate and adjacent to an edge of the first gate structure, wherein the dislocation has an angle θ1 measured with respect to a reference level orthogonal to the surface of the semiconductor substrate, and wherein the pinchoff point is spaced from the edge of the first gate structure by a distance W and is spaced from the surface of the semiconductor substrate by a depth D2;
- and
- a source/drain feature with a tip in the semiconductor substrate and adjacent to an edge of the second gate structure, wherein the tip is at a depth D3 relative the surface of the semiconductor substrate and is spaced from the edge of the second gate structure by a distance S, and wherein W>|D2−D3|*tan θ1+S.
A method comprising:
- forming a first gate stack and a second gate stack over a substrate, the substrate having a surface;
- forming a first amorphized region in the substrate adjacent to an edge of the first gate stack;
- forming a second amorphized region in the substrate adjacent to an edge of the second gate stack;
- forming a stress film over the substrate;
- performing a process to form a first dislocation adjacent the first gate stack in the substrate and to form a second dislocation adjacent the second gate stack in the substrate, the first dislocation forming an angle θ1 measured with respect to a reference level orthogonal to the surface of the substrate, the first dislocation having a lowermost point in the substrate, the lowermost point being spaced from the edge of the first gate stack by a distance W and has a depth D2 relative the surface of the substrate;
- removing at least a portion of the first dislocation to form a recess cavity in the substrate while leaving the second dislocation intact, the recess cavity having a depth D3 relative the surface of the substrate and is spaced from the edge of the second gate stack by a distance S, wherein W>|D2−D3|*tan(θ1)+S;
- and
- forming a source/drain feature in the recess cavity.
Dependencies are inferred from the claim text.