Method of fabricating integrated circuit devices
AssigneeSamsung Electronics Co., Ltd.
InventorsMyung-Gil KANG, Sung-Bong KIM, Chang-Woo OH, Dong-Won KIM
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Abstract
An integrated circuit device includes a first transistor having a first channel between a first source/drain, and a second transistor having a second channel between a second source/drain. The first transistor operates based on a first amount of current and the second transistor operates based on a second amount of current different from the first amount of current. The first and second channels have fixed channel widths. The fixed channel widths may be based on fins or nanowires included in the first and second transistors.
Claims7
-23. (canceled)
A fabricating method of an integrated circuit device, the method comprising:
- providing a substrate having a first region and a second region defined therein;
- forming a first fin in the first region and forming a second fin in the second region;
- forming a first gate electrode intersecting the first fin in the first region and forming a second gate electrode intersecting the second fin in the second region;
- and
- forming a first recess in the first fin at either side of the first gate electrode in the first region and forming a second recess in the second fin at either side of the second gate electrode in the second region,
- wherein a depth of the first recess is different from a depth of the second recess.
Dependencies are inferred from the claim text.