Ruthenium film forming method, film forming apparatus, and semiconductor device manufacturing method

A film forming apparatus, comprising:

• a processing vessel configured to accommodate a processing target substrate therein;
• a film forming source container configured to contain ruthenium carbonyl in a solid state as a film forming source material;
• a CO gas container configured to contain a CO gas;
• a film forming gas supply path configured to introduce a mixed gas of the CO gas and a ruthenium carbonyl gas, which is generated by introducing the CO gas as a carrier gas into the film forming source container, into the processing vessel;
• a CO gas supply path configured to introduce the CO gas from the CO gas container directly into the processing vessel without passing through the film forming source container;
• and
• a controller configured to perform a process of forming a ruthenium film within the processing vessel by a chemical vapor deposition method,
• wherein, by switching the introduction of the mixed gas into the processing vessel through the film forming gas supply path and the introduction of the CO gas direct into the processing vessel through the CO gas supply path,
• the controller performs a deposition process of introducing the mixed gas into the processing vessel through the film forming gas supply path and depositing metal ruthenium on a surface of the processing target substrate by decomposing the ruthenium carbonyl, and
• the controller performs a CO gas introduction process of introducing the CO gas directly into the processing vessel through the CO gas supply path and bringing the CO gas into contact with the metal ruthenium on the surface of the processing target substrate after stopping the introducing of the mixed gas.