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US 2016/0240431 A1Published application
Magnetic sidewalls for write lines in field-induced mram and methods of manufacturing them
AssigneeIII Holdings 1, LLC
InventorKrishnakumar Mani
Life of this patent
Estimating the term…
Abstract
In one embodiment, there is provided a non-volatile magnetic memory cell. The non-volatile magnetic memory cell comprises a switchable magnetic element; and a word line and a bit line to energize the switchable magnetic element; wherein at least one of the word line and the bit line comprises a magnetic sidewall that is discontinuous.
Claims25
1-20. (canceled)
A method for manufacturing a discontinuous magnetic sidewall of at least one of a word line and a bit line, the method comprising:
- defining the at least one of the word line and the bit line;
- depositing layers on the at least one of the word line and the bit line;
- defining a magnetic sidewall;
- protecting discontinuous portions of the defined magnetic sidewall, wherein non-protected portions define exposed portions;
- and
- removing the exposed portions.
3 more elements
A method for manufacturing a discontinuous magnetic sidewall of at least one of a word line and a bit line, the method comprising:
- etching a groove in a dielectric layer;
- depositing layers in the groove;
- defining a magnetic sidewall;
- protecting discontinuous portions of the defined magnetic sidewall, wherein non-protected portions define exposed portions;
- and
- removing the exposed portions.
3 more elements
Dependencies are inferred from the claim text.