Process for molecular layer doping of germanium substrates
AssigneeUniversity College Cork, National University of Ireland, Cork
InventorsBrenda Long, Justin Holmes, Ray Duffy
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Abstract
A method of molecular layer doping of a germanium substrate comprises the steps of cleaning a surface of the germanium substrate to remove oxides, reacting the cleaned surface with a dopant solution comprising dopant material and a suitable solvent for the dopant at low temperature for a suitable period of time while irradiating the substrate with UV light, and thermal annealing of the germanium substrate.
Claims16
A method of molecular layer doping of a germanium substrate, the method comprising the steps of:
- cleaning a surface of the germanium substrate to remove oxides;
- reacting the cleaned surface with a dopant solution comprising dopant material and a suitable solvent for the dopant at low temperature for a suitable period of time while irradiating the substrate with UV light;
- and
- thermal annealing of the germanium substrate.
A germanium substrate doped with a Group III or Group V atom by means of molecular layer doping and having a doping concentration of at least 1×1018 cm−3.
Dependencies are inferred from the claim text.