Method and apparatus for fabricating two-dimensional layered chalcogenide film
AssigneeG-Force Nanotech Ltd.
InventorsCHAO-HUI YEH, JEN-KUAN CHIU
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Abstract
A method and apparatus for fabricating two-dimensional layered chalcogenide film are provided. A catalyst gas, a metal-based precursor gas and a chalcogen-based precursor gas are ionized with external stimuli to generate energetic particles which facilitate a chalcogen-substitution reaction of a metal-based precursor gas in a reaction chamber to form uniform two-dimensional layered chalcogenide film of at least a single crystalline layer via chemical vapor deposition.
Claims20
A method of fabricating two-dimensional layered chalcogenide film comprising:
- providing a substrate within a reaction chamber;
- heating the substrate to a reaction temperature;
- introducing a chalcogen-based precursor gas, a metal-based precursor gas, and a catalyst gas to the reaction chamber;
- providing an external stimulus to generate energetic particles from the chalcogen-based precursor gas, the metal-based precursor gas, and the catalyst gas;
- and
- forming a two-dimensional layered chalcogenide film on the substrate.
An apparatus of fabricating two-dimensional layered chalcogenide film comprising:
- a reaction chamber;
- a gas supply unit in fluid communication with the reaction chamber to at least supply a catalyst gas into the reaction chamber;
- an vacuum unit in fluid communication with the reaction chamber to introduce a vacuum into the reaction chamber;
- and
- an setup of external stimuli to generate energetic particles from the catalyst gas, a metal-based precursor gas and a chalcogen-based precursor gas introduced into the reaction chamber, wherein the energetic particles facilitate chalcogen-substitution reactions of the metal-based precursor gas and form a two-dimensional layered chalcogenide film.
Dependencies are inferred from the claim text.