Method for forming insulating film and method for manufacturing semiconductor device
AssigneeTokyo Electron Limited
InventorsShigeru KASAI, Kotaro MIYATANI, Takuya KUROTORI, Kenichi KOTE, Yutaka FUJINO, Akira TANIHARA, Kohei KAWAMURA
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Abstract
In a method for forming a fluorocarbon-based insulating film to be in contact with a metal, a microwave is irradiated to the metal to which moisture is adhered in a hydrogen-containing atmosphere. Then plasma CVD using a fluorocarbon-based gas is performed on the metal to which the microwave is irradiated to form the insulating film.
Claims17
A method for forming a fluorocarbon-based insulating film to be in contact with a metal, the method comprising:
- irradiating a microwave to the metal to which moisture is adhered in a hydrogen-containing atmosphere;
- and
- performing plasma CVD using a fluorocarbon-based gas on the metal to which the microwave is irradiated to form the insulating film.
A method for manufacturing a semiconductor device having a fluorocarbon-based insulating film to be in contact with a metal, the method comprising:
- irradiating a microwave to the metal to which moisture is adhered in a hydrogen-containing atmosphere;
- and
- performing plasma CVD using a fluorocarbon-based gas on the metal to which the microwave is irradiated to form the insulating film.
Dependencies are inferred from the claim text.