Protection method for protecting a silicide layer
AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorNicolas Posseme
Life of this patent
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Abstract
The method includes the steps of: a) providing a stack including, successively, a substrate, a silicide layer formed on the substrate, and a silicon nitride layer covering at least the silicide layer, b) etching predefined regions of the silicon nitride layer in such a way as to expose at least areas of the silicide layer intended to form the electrical contacts, and c) depositing a protective layer on at least the areas of the silicide layer exposed in step b), the method not including a step of exposing the stack to moisture between step b) and step c), in particular moisture from the ambient air.
Claims16
A protection method for protecting a silicide layer intended to form electrical contacts for integrated circuits, the protection method comprising the steps of:
- a) Providing a stack comprising successively:
- a substrate,
- a silicide layer formed on the substrate, and
- a silicon nitride layer covering at least the silicide layer,
- b) Etching determined regions of the silicon nitride layer so as to expose at least areas of the silicide layer intended to form the electrical contacts, and
- c) Depositing a protective layer at least over the areas of the silicide layer exposed at step b),
- the protection method being devoid of any step of exposition of the stack to humidity between step b) and step c).
Dependencies are inferred from the claim text.