Method for manufacturing compound semiconductor epitaxial substrates including heating of carrier gas
AssigneePanasonic Corporation
InventorChiaki KUDOU
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Abstract
An aspect of the present disclosure resides in a method for manufacturing a compound semiconductor epitaxial substrate including a substrate and a compound semiconductor epitaxial layer disposed on the substrate, the method including providing the substrate, heating a carrier gas, preparing a mixed gas by mixing the heated carrier gas with at least a portion of a source gas that is a source for the compound semiconductor epitaxial layer, the source gas having a lower temperature than the heated carrier gas, and forming the compound semiconductor epitaxial layer on the substrate by supplying the mixed gas onto the substrate.
Claims8
A method for manufacturing a compound semiconductor epitaxial substrate including a substrate and a compound semiconductor epitaxial layer disposed on the substrate, comprising:
- providing the substrate;
- heating a carrier gas;
- preparing a mixed gas by mixing the heated carrier gas with at least a portion of a source gas that is a source for the compound semiconductor epitaxial layer, the source gas having a lower temperature than the heated carrier gas;
- and
- forming the compound semiconductor epitaxial layer on the substrate by supplying the mixed gas onto the substrate.
Dependencies are inferred from the claim text.