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US 2016/0240367 A1Published application
Method for forming film having low resistance and shallow junction depth
AssigneeASM IP Holding B.V.
InventorsYosuke Kimura, David de Roest
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Abstract
A method for forming on a substrate a doped silicon oxide film with a cap film, includes: forming an arsenosilicate glass (ASG) film as an arsenic (As)-doped silicon oxide film on a substrate; continuously treating a surface of the ASG film with a treating gas constituted by Si, N, and H without excitation; and continuously forming a silicon nitride (SiN) film as a cap film on the treated surface of the ASG film.
Claims18
A method for forming on a substrate a doped silicon oxide film with a cap film, comprising:
- (i) forming an arsenosilicate glass (ASG) film having a desired thickness as an arsenic (As)-doped silicon oxide film on a substrate;
- (ii) after completion of step (i), continuously treating a surface of the ASG film with a treating gas constituted by Si, N, and H without excitation of the treating gas so as to adsorb the treating gas on the surface of the ASG film;
- and
- (iii) after completion of step (ii), continuously forming a silicon nitride (SiN) film as a cap film on the treating gas-adsorbed surface of the ASG film.
1 more element
Dependencies are inferred from the claim text.