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US 2016/0240366 A1Published application
Processing of Semiconductor Devices
AssigneeInfineon Technologies AG
InventorsManfred Engelhardt, Hannes Eder
Life of this patent
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Abstract
A method of thinning a wafer includes thinning the wafer using a grinding process. The wafer, after the grinding processing, has a first non-uniformity in thickness. The thinned wafer is etched using a plasma process. The wafer after the etching processing has a second non-uniformity in thickness. The second non-uniformity is less than the first non-uniformity.
Claims33
A method of thinning a wafer, the method comprising:
- thinning the wafer using a grinding process, the wafer after the grinding processing has a first non-uniformity in thickness;
- and
- using a plasma process, etching the thinned wafer, the wafer after the etching processing has a second non-uniformity in thickness, wherein the second non-uniformity is less than the first non-uniformity.
A method of etching comprising:
- mounting a substrate in a process chamber, wherein the substrate is mounted over a heating unit comprising a plurality of heating elements disposed in a plane parallel to the substrate;
- heating each of the plurality of heating elements, wherein a level of heating of each of the plurality of heating elements is varied in a non-radial pattern for producing a non-radial heat distribution emanating from the plurality of heating elements;
- and
- etching the substrate in the process chamber after the heating.
1 more element
A method of thinning a wafer, the method comprising:
- providing a wafer having a first non-radial non-uniformity in thickness;
- and
- etching the wafer using a plasma process, the wafer having a second non-radial non-uniformity in thickness after the etching, wherein the second non-radial non-uniformity is less than the first non-radial uniformity, wherein a heating pattern for heating an exposed major surface of the wafer is computed to reduce the first non-radial non-uniformity to the second non-radial non-uniformity before the etching.
A process tool comprising:
- a plasma chamber;
- a chuck disposed in the plasma chamber, the chuck being configured to hold a thinned wafer during processing, the thinned wafer having a first non-uniformity in thickness from a prior grinding process;
- and
- a heating unit comprising a plurality of heating elements, wherein each of the heating elements is configured to be heated independently from the remaining of the plurality of heating elements, wherein the process tool is configured to etch the thinned wafer, wherein the thinned wafer after the etching has a second non-uniformity in thickness, wherein the second non-uniformity is less than the first non-uniformity.
1 more element
Dependencies are inferred from the claim text.