System and method for differential etching
AssigneeInternational Business Machines Corporation
InventorsRobert G. Biskeborn, Calvin S. Lo, Cherngye Hwang, Andrew C. Ting
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Abstract
A plasma sputtering apparatus according to one embodiment includes a chamber and a reservoir in fluidic communication with the chamber. The reservoir stores a vapor source therein, and is configured to release vapor at a predetermined rate. The vapor released by the reservoir is effective to diminish an etch rate of a first magnetic material, the vapor having a smaller effect on an etch rate of a second magnetic material that is different than the first magnetic material. The apparatus also includes a mount for a substrate and a plasma source.
Claims20
A plasma sputtering apparatus, comprising:
- a chamber;
- a reservoir in fluidic communication with the chamber, the reservoir storing a vapor source therein, the reservoir being configured to release vapor at a predetermined rate, wherein the vapor released by the reservoir is effective to diminish an etch rate of a first magnetic material, the vapor having a smaller effect on an etch rate of a second magnetic material that is different than the first magnetic material;
- a mount for a substrate;
- and
- a plasma source.
A plasma sputtering apparatus, comprising:
- a chamber;
- a reservoir in fluidic communication with the chamber, the reservoir being configured to release a vapor at an established rate, wherein the reservoir comprises a porous material selected from the group consisting of:
- a metal oxide, silicon nitride, silicon carbide, and combinations thereof;
- a mount for a substrate;
- and
- a plasma source.
Dependencies are inferred from the claim text.