Method for controlling potential of susceptor of plasma processing apparatus
AssigneeTokyo Electron Limited
InventorKoichi NAGAMI
Life of this patent
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Abstract
Disclosed is a method of suppressing abnormal discharge through a space between a space and a susceptor. A pulse-modulated high frequency wave is supplied from at least one of a first high frequency power supply and a second high frequency power supply. In addition, a DC voltage, which is pulse-modulated in synchronization with the modulated high frequency wave, is applied to the susceptor from a voltage application unit. A voltage value of the modulated DC voltage is set to reduce a difference between a potential of the substrate placed on an electrostatic chuck and a potential of the susceptor.
Claims10
A method for controlling a potential of a susceptor of a plasma processing apparatus that includes:
- a processing container;
- a susceptor formed of a conductor and provided within the processing container;
- an electrostatic chuck provided on the susceptor;
- a first high frequency power supply configured to generate a first high frequency wave for ion drawing-in;
- a second high frequency power supply configured to generate a second high frequency wave for plasma generation;
- a DC power supply configured to apply a positive polarity DC voltage to an electrode of the electrostatic chuck;
- and a voltage application unit configured to apply a voltage to the susceptor, the method comprising:
- supplying a pulse modulated high frequency wave from at least one of the first high frequency power supply and the second high frequency power supply to the susceptor;
- and
- applying a DC voltage, which is pulse-modulated in synchronization with the modulated high frequency wave, from the voltage application unit to the susceptor, the modulated DC voltage having a voltage value set to reduce a difference between the potential of the substrate placed on the electrostatic chuck and the potential of the susceptor.
Dependencies are inferred from the claim text.