Resistance memory cell

A resistance memory, comprising:

• a resistance memory cell including
• a resistance memory element formed of a resistive material, and
• an access device coupled in series with the resistance memory element;
• a circuit to apply a set pulse to the resistance memory cell, the set pulse having a set polarity to set the resistance memory cell to a low-resistance state, the circuit to apply a reset pulse having a reset polarity that is opposite the set polarity to reset the resistance memory cell to a high-resistance state, the circuit to apply a read pulse of the reset polarity to carry out a read operation;
• and
• wherein the resistance material exhibits the same material phase whether in the high-resistance state or the low-resistance state.

A resistance memory cell, comprising:

• a resistance memory element formed of a resistive material;
• an access device coupled in series with the resistance memory element;
• wherein:
• application of a set pulse having a set polarity to the resistance memory cell sets the resistance memory cell to a low-resistance state that is retained after application of the set pulse, and application of a reset pulse having a reset polarity to the resistance memory cell resets the resistance memory cell to a high-resistance state that is retained after application of the reset pulse, the set polarity being opposite to the reset polarity;
• application of a read pulse of the reset polarity determines the resistance state of the resistance memory cell;
• and
• wherein the resistance material exhibits the same material phase whether in the high-resistance state or the low-resistance state.

A method for reading a resistance memory cell, the method comprising:

• providing a resistance memory cell comprising an access device and a resistance memory element formed of a resistive material coupled in series, the resistance memory cell switchable from a high-resistance state to a low-resistance state by application of a set pulse having a set polarity, and switchable from the low-resistance state to the high-resistance state by application of a reset pulse having a reset polarity, the set polarity being opposite the reset polarity, the access device enabling bi-directional flow of current through the resistance memory cell in response to application of a voltage greater than a threshold voltage;
• applying to the resistance memory cell a read pulse of the reset polarity to read the resistance state of the resistance memory cell, wherein the read pulse is of a voltage that produces across the access device a voltage sufficient to reduce the dynamic resistance of the two-terminal access device to less than the resistance of the resistance memory element in the high-resistance state;
• and
• wherein the application of the set and reset pulses is carried out such that the resistance material exhibits the same material phase whether in the high-resistance state or the low-resistance state.