Adjusting resistive memory write driver strength based on a mimic resistive memory write operation

A write driver adjustment circuit for adjusting a write current for a resistive memory, comprising:

• a means for providing a mimic write current that mimics a write current provided by a write driver to a resistive memory to a mimic resistive memory to perform a mimic write operation;
• a means for determining a mimic voltage generated across the mimic resistive memory in response to the mimic resistive memory receiving the mimic write current;
• a means for comparing the mimic voltage to a threshold voltage;
• and
• a means for adjusting the write current provided by the write driver based on comparing the mimic voltage to the threshold voltage.

A method of adjusting a write driver current to reduce a breakdown failure rate of a corresponding resistive memory system, comprising:

• providing a mimic write current that mimics a write current provided by a write driver to a resistive memory to a mimic resistive memory;
• determining a mimic voltage generated across the mimic resistive memory in response to the mimic resistive memory receiving the mimic write current;
• comparing the mimic voltage to a threshold voltage;
• and
• adjusting the write current provided by the write driver based on comparing the mimic voltage to the threshold voltage.

A magnetic random access memory (MRAM) system comprising:

• an MRAM memory;
• a write driver configured to provide a write current to the MRAM memory;
• and
• a write driver adjustment circuit comprising:
• a mimic write driver circuit configured to provide a mimic write current mimicking the write current provided by the write driver to the MRAM memory;
• a mimic resistive memory having a mimic resistance corresponding to a resistance of the MRAM memory;
• and
• a write driver control circuit configured to:
• determine a mimic voltage generated across the mimic resistive memory when the mimic write current is provided to the mimic resistive memory;
• compare the determined mimic voltage to a threshold voltage;
• and
• adjust the write current provided by the write driver to the MRAM memory based on the comparison of the mimic voltage to the threshold voltage.