Memory system

A memory system comprising:

• a memory configured to be written data therein, the memory including a memory cell configured to hold charge of an amount corresponding to a value included in the data, the memory converting an amount of charge held by the memory cell into the value in reading on the basis of comparison between the amount of charge held by the memory cell and a determination potential;
• a first correction unit configured to execute error correction;
• and
• a processor configured to execute a first process of reading first data from the memory, execute a second process of reading the first data by making the memory use a first determination potential different from a second determination potential in a case where the first correction unit fails in error correction of the first data read through the first process, the second determination potential being the determination potential used by the memory in the first process, and execute a third process of reading second data from the memory by making the memory use a third determination potential in a case where the first correction unit succeeds in error correction of the first data read through the second process, the third determination potential being the first determination potential used by the memory in a case where the first correction unit succeeds in error correction of the first data read through the second process.