Storage devices, memory systems and operating methods thereof
AssigneeSamsung Electronics Co., Ltd.
InventorsWoonjae CHUNG, HanShin SHIN
Life of this patent
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Abstract
In a method for operating a NAND flash memory system, a temperature sensing device detects a decrease in temperature of the NAND flash memory system below a first threshold temperature level, and a clock control unit adjusts an operating condition for a memory access operation in response to detecting the decrease in the temperature below the first threshold temperature level.
Claims26
A method for operating a NAND flash memory system, the method comprising:
- detecting a decrease in temperature of the NAND flash memory system below a first threshold temperature level;
- and
- adjusting an operating condition for a memory access operation in response to detecting the decrease in the temperature below the first threshold temperature level.
(canceled)
-17. (canceled)
A method for operating a memory system, the method comprising:
- adjusting a data I/O speed for a memory access operation based on temperature information associated with the memory system, wherein
- the adjusting adjusts the data I/O speed to a first data I/O speed if the temperature information indicates that a temperature of the memory system is below a first threshold temperature level,
- the adjusting adjusts the data I/O speed to a second data I/O speed if the temperature information indicates that the temperature of the memory system is between the first threshold temperature level and a second threshold temperature level, and
- the adjusting adjusts the data I/O speed to a third data I/O speed if the temperature information indicates that the temperature of the memory system is greater than the second threshold temperature level.
(canceled)
(canceled)
A method for operating a NAND flash memory system, the method comprising:
- detecting a decrease in a temperature of the NAND flash memory system below a first threshold temperature level;
- and
- decreasing at least one of a clock frequency and a data I/O speed for a memory access operation in response to detecting the decrease in the temperature of the NAND flash memory system below the first threshold temperature level.
(canceled)
-36. (canceled)
Dependencies are inferred from the claim text.