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US 2016/0238938 A1Published application
Methods of forming patterns
AssigneeSK hynix Inc.
InventorsKeun Do BAN, Cheol Kyu BOK, Jung Gun HEO, Hong Ik KIM
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Abstract
Methods of forming patterns includes guide patterns on a neutral layer. A self-assembling block copolymer (BCP) layer on the guide patterns and the neutral layer. By annealing the self-assembling BCP layer, first polymer block domains and second polymer block domains are formed The guide patterns are formed of a developable antireflective material. The neutral layer is formed of a cross-linked polymeric material.
Claims20
A method of forming patterns, the method comprising:
- forming a neutral layer on an underlying layer;
- forming a developable antireflective layer on the neutral layer;
- forming a photoresist layer on the developable antireflective layer;
- selectively exposing portions of the photoresist layer and portions of the developable antireflective layer to light;
- selectively removing, non-exposed portions of the photoresist layer to form a photoresist pattern exposing non-exposed portions of the developable antireflective layer;
- selectively removing the exposed portions of the developable antireflective layer to form guide patterns exposing portions of the neutral layer;
- forming a self-assembling block copolymer (BCP) layer on the guide patterns and the exposed neutral layer;
- and
- annealing the self-assembling BCP layer to form first polymer block domains and second polymer block domains, which are alternately and repeatedly arrayed.
6 more elements
A method of forming patterns the method comprising:
- forming an inorganic underlying layer;
- forming a cross-linked polymeric neutral layer on the underlying layer;
- forming a developable antireflective layer on the neutral layer;
- forming a photoresist layer on the developable antireflective layer;
- selectively exposing portions of the photoresist layer and portions of the developable antireflective layer to light;
- selectively removing, non-exposed portions of the photoresist layer to form a photoresist pattern exposing non-exposed portions of the developable antireflective layer;
- selectively removing the exposed portions of the developable antireflective layer to form guide patterns exposing portions of the neutral layer;
- is forming a self-assembling block copolymer (BCP) layer on the guide patterns and the exposed neutral layer;
- and
- annealing the self-assembling BCP layer to form first polymer block domains and second polymer block domains, which are alternately and repeatedly arrayed.
7 more elements
A method of forming patterns, the method comprising:
- forming an inorganic underlying layer;
- forming a cross-linked polymeric neutral layer on the underlying layer;
- forming a developable an reflective layer on the neutral layer;
- forming a photoresist layer on the developable antireflective layer;
- selectively exposing portions of the photoresist layer and portions of the developable antireflective layer to light;
- selectively removing non-exposed portions of the photoresist layer to form a photoresist pattern exposing non-exposed portions of the developable antireflective layer;
- selectively removing the exposed portions of the developable antireflective layer to form guide patterns exposing portions of the neutral layer, the guide patterns having line shape;
- forming a self-assembling block copolymer (BCP) layer on the guide patterns and the exposed neutral layer;
- and
- annealing the self-assembling BCP layer to form first polymer block domains and second polymer block domains, which are alternately and repeatedly arrayed.
7 more elements
Dependencies are inferred from the claim text.