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US 2016/0238552 A1Published application
Method and system for diamond-based oxygen sensor
AssigneeHoneywell International Inc.
InventorsMihai Brezeanu, Bogdan-Catalin Serban, Viorel Georgel Dumitru, Octavian Buiu
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Abstract
A diamond based oxygen sensor is able to function in harsh environment conditions. The oxygen sensor includes a gateless field effect transistor including a synthetic, quasi-intrinsic, hydrogen-passivated, monocrystalline diamond layer exhibiting a 2-dimension hole gas effect. The oxygen sensor also includes a sensing layer comprising yttrium-stabilized zirconia deposited onto a surface of the gateless field effect transistor.
Claims20
An oxygen sensor, comprising:
- a gateless field effect transistor (FET) including a synthetic, quasi-intrinsic, hydrogen-passivated monocrystalline diamond layer exhibiting a 2-dimension hole gas effect;
- and
- an oxygen-sensing layer including a yttrium-stabilized zirconia (YSZ) supported by the gateless FET.
A method of forming a gateless FET oxygen sensor, comprising:
- forming a gateless field effect transistor (FET);
- and
- forming an oxygen-sensing layer including a yttrium-stabilized zirconia (YSZ) supported by the gateless FET.
Dependencies are inferred from the claim text.