Optopairs with temperature compensable electroluminescence for use in optical gas absorption analyzers
AssigneeBAH Holdings LLC
InventorsMichael Tkachuk, SERGEY SUCHALKIN
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AssigneeBAH Holdings LLC
InventorsMichael Tkachuk, SERGEY SUCHALKIN
Estimating the term…
Optopair for use in sensors and analyzers of gases such as methane, and a fabrication method therefor is disclosed. It comprises: a) an LED, either cascaded or not, having at least one radiation emitting area, whose spectral maximum is de-tuned from the maximum absorption spectrum line of the gas absorption spectral band; and b) a Photodetector, whose responsivity spectral maximum can be either de-tuned from, or alternatively completely correspond to the maximum absorption spectrum line of the absorption spectral band of the gas. Modeling the LED emission and Photodetector responsivity spectra and minimizing the temperature sensitivity of the optopair based on the technical requirements of the optopair signal registration circuitry, once the spectral characteristics of the LED and Photodetector materials and the temperature dependencies of said spectral characteristics are determined, provides the LED de-tuned emission and Photodetector responsivity target peaks respectively.
An optopair for use in optical sensors for analysis of a gas comprising at least one radiation source and at least one radiation detector, said at least one radiation source comprising an LED having at least one active area whose spectral maximum is de-tuned from the maximum absorption spectrum line of the absorption spectral band of the gas being analyzed.
An improved optical absorption gas analyser for determining the concentration of a target gas in a sample, in which is found a chamber for containing the sample in use;
A photo-detector comprising a sequence of a contact layer, a middle barrier layer and an n-type photon absorbing layer, said contact layer having a valence band, said n-type photon absorbing layer having a conduction band, said middle barrier layer having an energy bandgap significantly greater than that of the photon absorbing layer, and the top energy of said valence band of said contact layer is not more than the bottom energy of said conduction band of said n-type photon absorbing layer.
Dependencies are inferred from the claim text.