Non-amine post-cmp composition and method of use
AssigneeAdvanced Technology Materials, Inc.
InventorsJeffrey A. BARNES, Jun LIU, Peng ZHANG
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Abstract
A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions are substantially devoid of amine and ammonium-containing compounds, e.g., quaternary ammonium bases. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.
Claims21
A cleaning composition comprising a concentrate and a diluting solvent, wherein the concentrate comprises at least one basic salt, at least one organic solvent, at least one complexing agent, and water, wherein the ratio of concentrate to diluting solvent is in a range from about 10:1 to about 1000:1, and wherein the cleaning composition is substantially devoid of amine and ammonium-containing salts.
(canceled)
A method of removing residue and contaminants from a microelectronic device having said residue and contaminants thereon, said method comprising contacting the microelectronic device with a cleaning composition for sufficient time to at least partially clean said residue and contaminants from the microelectronic device, wherein the cleaning composition includes a concentrate and a diluting solvent, wherein the concentrate comprises at least one basic salt, at least one organic solvent, at least one complexing agent, optionally at least one surfactant, and water, wherein the ratio of concentrate to diluting solvent is in a range from about 10:1 to about 1000:1, and wherein the cleaning composition is substantially devoid of amine and ammonium-containing salts.
Dependencies are inferred from the claim text.